Publication
Title
Plasma deposition of amorphous as-s films
Author
Abstract
Hydrogenated AsxS1-x thin layers have been prepared by plasma decomposition of the constituent hydrides. Microprobe analysis shows that the chemical composition and homogeneity depend not only on the AsH3/H2S ratio but also on the gas pressure. Infrared and Raman spectra reveal the presence of As4S4 and As4S3 molecular units in the structure of As rich samples. On light exposure photobleaching is observed in samples with overstoichiometry of As (x greater-than-or-equal-to 0.5).
Language
English
Source (journal)
Journal of non-crystalline solids. - Amsterdam
Source (book)
14TH INTERNATIONAL CONF ON AMORPHOUS SEMICONDUCTORS - SCIENCE AND, TECHNOLOGY ( ICAS-14 ), AUG 19-23, 1991, GARMISCH PARTENKIRCHEN, GERMANY
Publication
Amsterdam : 1991
ISSN
0022-3093
Volume/pages
137:Part 2(1991), p. 1001-1004
ISI
A1991GX22800089
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 03.01.2013
Last edited 09.06.2017
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