|
Title
|
|
|
|
Plasma deposition of amorphous as-s films
|
|
|
Author
|
|
|
|
|
|
|
Abstract
|
|
|
|
| Hydrogenated AsxS1-x thin layers have been prepared by plasma decomposition of the constituent hydrides. Microprobe analysis shows that the chemical composition and homogeneity depend not only on the AsH3/H2S ratio but also on the gas pressure. Infrared and Raman spectra reveal the presence of As4S4 and As4S3 molecular units in the structure of As rich samples. On light exposure photobleaching is observed in samples with overstoichiometry of As (x greater-than-or-equal-to 0.5). |
|
|
|
Language
|
|
|
|
English
|
|
|
Source (journal)
|
|
|
|
Journal of non-crystalline solids. - Amsterdam
|
|
|
Source (book)
|
|
|
|
14TH INTERNATIONAL CONF ON AMORPHOUS SEMICONDUCTORS - SCIENCE AND, TECHNOLOGY ( ICAS-14 ), AUG 19-23, 1991, GARMISCH PARTENKIRCHEN, GERMANY
|
|
|
Publication
|
|
|
|
Amsterdam
:
1991
|
|
|
ISSN
|
|
|
|
0022-3093
|
|
|
DOI
|
|
|
|
10.1016/S0022-3093(05)80290-X
|
|
|
Volume/pages
|
|
|
|
137
:Part 2
(1991)
, p. 1001-1004
|
|
|
ISI
|
|
|
|
A1991GX22800089
|
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
|
Full text (publisher's version - intranet only)
|
|
|
|
|
|