Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry

Vanhellemont, J.; Maes, H.E.; Schaekers, M.; van Landuyt, J.; et al.

doi:10.1016/0169-4332(93)90062-G

Title

Round-robin investigation of silicon-oxide on silicon reference materials for ellipsometry

Author

Vanhellemont, J.

Maes, H.E.

Schaekers, M.

van Landuyt, J.

et al.

Abstract

The main results and conclusions are presented of a round robin study of silicon oxide on silicon reference samples for ellipsometry. The oxide films with nominal thicknesses of 10, 50 and 120 nm are grown by thermal oxidation. The oxide film thicknesses have been determined by single wavelength ellipsometry (SWE), by spectroscopic ellipsometry (SE) and by cross-sectional conventional and high-resolution transmission electron microscopy (TEM and HREM) in different laboratories. The main conclusions are that special precautions have to be taken in order to use TEM as a reliable thickness measurement technique; that single wavelength ellipsometry can be used with great accuracy and reproducibility for the 50 and 120 nm film thicknesses but that it shows some inherent problems for the 10 nm films; and that spectroscopic ellipsometry showed for all film thicknesses an accuracy and reproducibility which is clearly superior to that of SWE.

Language

English

Source (journal)

Applied surface science. - Amsterdam

Source (book)

SYMP ON DIAGNOSTIC TECHNIQUES FOR SEMICONDUCTOR MATERIALS ANALYSIS AND, FABRICATION PROCESS CONTROL, AT THE 1992 SPRING CONF OF THE EUROPEAN, MATERIALS RESEARCH SOC, JUN 02-05, 1992, STRASBOURG, FRANCE

Publication

Amsterdam : Elsevier science bv , 1993

ISSN

0169-4332

DOI

10.1016/0169-4332(93)90062-G

Volume/pages

63 :1-4 (1993) , p. 45-51

ISI

A1993KF03400009

Full text (Publisher's DOI)

https://doi.org/10.1016/0169-4332(93)90062-G