|
Title
|
|
|
|
An electric field tunable energy band gap at silicene/(0001) ZnS interfaces
|
|
|
Author
|
|
|
|
|
|
|
Abstract
|
|
|
|
| The interaction of silicene, the silicon counterpart of graphene, with (0001) ZnS surfaces is investigated theoretically, using first-principles simulations. The charge transfer occurring at the silicene/(0001) ZnS interface leads to the opening of an indirect energy band gap of about 0.7 eV in silicene. Remarkably, the nature (indirect or direct) and magnitude of the energy band gap of silicene can be controlled by an external electric field: the energy gap is predicted to become direct for electric fields larger than about 0.5 V angstrom(-1), and the direct energy gap decreases approximately linearly with the applied electric field. The predicted electric field tunable energy band gap of the silicene/(0001) ZnS interface is very promising for its potential use in nanoelectronic devices. |
|
|
|
Language
|
|
|
|
English
|
|
|
Source (journal)
|
|
|
|
Physical chemistry, chemical physics / Royal Society of Chemistry [London] - Cambridge, 1999, currens
|
|
|
Publication
|
|
|
|
Cambridge
:
The Royal Society of Chemistry
,
2013
|
|
|
ISSN
|
|
|
|
1463-9076
[print]
1463-9084
[online]
|
|
|
DOI
|
|
|
|
10.1039/C3CP50391G
|
|
|
Volume/pages
|
|
|
|
15
:11
(2013)
, p. 3702-3705
|
|
|
ISI
|
|
|
|
000315165100002
|
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
|
Full text (publisher's version - intranet only)
|
|
|
|
|
|