Title
Asymmetry and switching phenomenology in TiN\ <tex>$(Al_{2}O_{3})$</tex> \ <tex>$HfO_{2}$</tex> \ Hf systems
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Pennington (N.J.) :Electrochemical society ,
Subject
Physics
Source (journal)
ECS solid state letters / Electrochemical Society. - Pennington (N.J.), s.a.
Volume/pages
1(2012) :4 , p. 63-65
ISSN
2162-8742
ISI
000318340300005
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset operation takes place close to the TiNanode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al2O3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003204ssl] All rights reserved.
E-info
https://repository.uantwerpen.be/docman/iruaauth/86f004/7cf3838.pdf
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