Publication
Title
Asymmetry and switching phenomenology in TiN\ $(Al_{2}O_{3})$ \ $HfO_{2}$ \ Hf systems
Author
Abstract
 In this letter, we address the bipolar resistive switching phenomenology in scaled TiN\HfO2\Hf cells. By means of stack engineering using a thin Al2O3 layer inserted either at the TiN\HfO2 or at the Hf\HfO2 interface, we demonstrate that the reset operation takes place close to the TiNanode. Due to the increase of the oxygen-vacancy profile from the TiN to the Hf interface, the filament-confining and wide band-gap Al2O3 layer should indeed be engineered at the interface with the TiN electrode in order to further improve the switching control and to allow reaching larger state resistances. (C) 2012 The Electrochemical Society. [DOI: 10.1149/2.003204ssl] All rights reserved.
Language
English
Source (journal)
ECS solid state letters / Electrochemical Society. - Pennington (N.J.), s.a.
Publication
Pennington (N.J.) : Electrochemical society, 2012
ISSN
2162-8742
2162-8750
Volume/pages
1:4(2012), p. 63-65
ISI
000318340300005
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
 Faculty/Department Research group Publication type Subject Affiliation Publications with a UAntwerp address