Publication
Title
Computer simulation of layer-by-layer sputtering at grazing low-energy ion-surface interactions
Author
Abstract
The peculiarities of sputtering processes at low-energy Ne grazing ion bombardment of Si(001), SiC(001) and Cu3Au(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (0.5-5 keV) and angle of incidence (0-30 degrees) with respect to the target surface have been calculated. It was shown that in the case of grazing ion bombardment, the layer-by-layer sputtering is possible, and its optimum is observed within the small angular range of the glancing angles near the threshold sputtering angle. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed. Copyright (C) 2012 John Wiley & Sons, Ltd.
Language
English
Source (journal)
Surface and interface analysis. - London
Publication
London : 2013
ISSN
0142-2421
Volume/pages
45:1(2013), p. 83-86
ISI
000319048700022
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 19.07.2013
Last edited 04.09.2017
To cite this reference