Title
Computer simulation of layer-by-layer sputtering at grazing low-energy ion-surface interactionsComputer simulation of layer-by-layer sputtering at grazing low-energy ion-surface interactions
Author
Faculty/Department
Faculty of Sciences. Biology
Research group
Molecular Plant Physiology and Biotechnology
Integrated Molecular Plant Physiology Research (IMPRES)
Publication type
article
Publication
London,
Subject
Chemistry
Source (journal)
Surface and interface analysis. - London
Volume/pages
45(2013):1, p. 83-86
ISSN
0142-2421
ISI
000319048700022
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The peculiarities of sputtering processes at low-energy Ne grazing ion bombardment of Si(001), SiC(001) and Cu3Au(001) surfaces and their possible application for the surface modification have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (0.5-5 keV) and angle of incidence (0-30 degrees) with respect to the target surface have been calculated. It was shown that in the case of grazing ion bombardment, the layer-by-layer sputtering is possible, and its optimum is observed within the small angular range of the glancing angles near the threshold sputtering angle. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed. Copyright (C) 2012 John Wiley & Sons, Ltd.
E-info
https://repository.uantwerpen.be/docman/iruaauth/acb330/e924096.pdf
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