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Title
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Figure of merit for and identification of sub-60 mV/decade devices
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Author
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Abstract
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| A figure of merit I60 is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to super-60 mV/decade behavior. For sub-60 mV/decade devices to be competitive with metal-oxide-semiconductor field-effect devices, I60 has to be in the 1-10 μA/μm range. The best experimental tunnel field-effect transistors (TFETs) in the literature only have an I60 of 6×10-3 μA/μm but using theoretical simulations, we show that an I60 of up to 10 μA/μm should be attainable. It is proven that the Schottky barrier FET (SBFET) has a 60 mV/decade subthreshold swing limit while combining a SBFET and a TFET does improve performance. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
:
American Institute of Physics
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2013
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.4773521
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Volume/pages
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102
:1
(2013)
, p. 1-4
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Article Reference
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013510
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ISI
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000313646500132
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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