Title
Numerical investigation of <tex>$SiO_{2}$</tex> coating deposition in wafer processing reactors with <tex>$SiCl_{4}/O_{2}/Ar$</tex> inductively coupled plasmas Numerical investigation of <tex>$SiO_{2}$</tex> coating deposition in wafer processing reactors with <tex>$SiCl_{4}/O_{2}/Ar$</tex> inductively coupled plasmas
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Weinheim ,
Subject
Physics
Chemistry
Source (journal)
Plasma processes and polymers. - Weinheim
Volume/pages
10(2013) :8 , p. 714-730
ISSN
1612-8850
ISI
000327790000006
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Simulations and experiments are performed to obtain a better insight in the plasma enhanced chemical vapor deposition process of SiO2 by SiCl4/O2/Ar plasmas for introducing a SiO2-like coating in wafer processing reactors. Reaction sets describing the plasma and surface chemistry of the SiCl4/O2/Ar mixture are presented. Typical calculation results include the bulk plasma characteristics, i.e., electrical properties, species densities, and information on important production and loss processes, as well as the chemical composition of the deposited coating, and the thickness uniformity of the film on all reactor surfaces. The film deposition characteristics, and the trends for varying discharge conditions, are explained based on the plasma behavior, as calculated by the model.
E-info
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