Title
Apparent and steady-state etch rates in thin film etching and under-etching of microstructures : 2: characterizationApparent and steady-state etch rates in thin film etching and under-etching of microstructures : 2: characterization
Author
Faculty/Department
Faculty of Applied Engineering Sciences
Research group
Faculty of Applied Engineering
Publication type
article
Publication
Bristol,
Subject
Engineering sciences. Technology
Source (journal)
Journal of micromechanics and microengineering. - Bristol
Volume/pages
(2010):20, p. 1-6
ISSN
0960-1317
ISI
000277305000034
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Abstract
The apparent and steady-state etch rates of PECVD SiO(2), HDP SiO(2) and PECVD Si(3)N(4) are measured both in a single thin film and a stacked film configuration. This is done for a HF:H(2)O/1:1, a HF(49 wt%): IPA/1:1 and a BHF solution. It is shown that etch rates vary with the used etch time, confirming the influence of both an incubation and a rinsing period on the average etch rate when performing typical ex situ etch rate experiments. Hence, this second part of a set of two papers provides the experimental evidence for part I where a general etch rate model was proposed. Furthermore this work shows that the etch rate varies whether it is determined on a single layer, in a stacked configuration or while under-etching a structural layer. This confirms the need of a straightforward characterization method for under-etching measurements at the sacrificial release stage of MEMS fabrication processes. Therefore, a new characterization method, using a suspended beam array and a surface profilometer, is proposed to determine the amount of under-etch after sacrificial release of surface micromachined devices.
E-info
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