Title
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Bilayer graphene Hall bar with a pn-junction
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Author
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Abstract
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We investigate the magnetic field dependence of the Hall and the bend resistances for a ballistic Hall bar structure containing a pn-junction sculptured from a bilayer of graphene. The electric response is obtained using the billiard model, and we investigate the cases of bilayer graphene with and without a band gap. Two different conduction regimes are possible: (i) both sides of the junction have the same carrier type and (ii) one side of the junction is n-type while the other one is p-type. The first case shows Hall plateau-like features in the Hall resistance that fade away as the band gap opens. The second case exhibits a bend resistance that is asymmetric in magnetic field as a consequence of snake states along the pn-interface, where the maximum is shifted away from ;zero magnetic field. (C) 2013 AIP Publishing LLC. |
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Language
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English
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Source (journal)
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2013
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ISSN
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0021-8979
[print]
1089-7550
[online]
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DOI
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10.1063/1.4821264
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Volume/pages
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114
:11
(2013)
, 11 p.
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Article Reference
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113706
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ISI
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000324827200031
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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