Publication
Title
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates
Author
Abstract
Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.
Language
English
Source (journal)
ECS solid state letters / Electrochemical Society. - Pennington (N.J.), s.a.
Publication
Pennington (N.J.) : Electrochemical society, 2013
ISSN
2162-8742
2162-8750
Volume/pages
2:11(2013), p. P104-P106
ISI
000324582600006
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 08.11.2013
Last edited 11.06.2017
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