Title
Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Pennington (N.J.) :Electrochemical society ,
Subject
Physics
Source (journal)
ECS solid state letters / Electrochemical Society. - Pennington (N.J.), s.a.
Volume/pages
2(2013) :11 , p. P104-P106
ISSN
2162-8742
2162-8750
2162-8742
ISI
000324582600006
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/41588f/5455.pdf
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