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Title
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Epitaxial chemical vapor deposition of silicon on an oxygen monolayer on Si(100) substrates
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Author
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Abstract
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| Crystalline superlattices consisting of alternating periods of Si layers and O-atomic layers are potential new channel materials for scaled CMOS devices. In this letter, we investigate Chemical Vapor Deposition (CVD) for the controlled deposition of O-atoms with O-3 as precursor on Si(100) substrates and Si epitaxy on the O-layer. The O-3 reaction at 50 degrees C on the H-terminated Si results in the formation of Si-OH and/or Si-O-Si-H surface species with monolayer O-content. Defect-free epitaxial growth of Si on an O-layer containing 6.4E+14 O-atoms/cm(2) is achieved from SiH4 at 500 degrees C. (C) 2013 The Electrochemical Society. All rights reserved. |
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Language
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English
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Source (journal)
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ECS solid state letters / Electrochemical Society. - Pennington (N.J.), s.a.
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Publication
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Pennington (N.J.)
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Electrochemical society
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2013
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ISSN
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2162-8742
2162-8750
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DOI
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10.1149/2.009311SSL
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Volume/pages
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2
:11
(2013)
, p. P104-P106
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ISI
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000324582600006
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Full text (Publisher's DOI)
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Full text (open access)
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