Electric field tuning of the band gap in four layers of graphene with different stacking order
Faculty of Sciences. Physics
Engineering sciences. Technology
Photonics and micro- and nano-structured materials 2011
Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA
, p. 1-8
University of Antwerp
We investigated the effect of different stacking order of the four graphene layer system on the induced band gap when positively charged top and negatively charged back gates are applied to the system. A tight-binding approach within a self-consistent Hartree approximation is used to calculate the induced charges on the different graphene layers. We show that the electric field does not open an energy gap if the multilayer graphene system contains a trilayer part with the ABA Bernal stacking.