Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip
Faculty of Sciences. Physics
Engineering sciences. Technology
Photonics and micro- and naon-structured materials 2011
Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA
, p. 1-8
University of Antwerp
We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated.