|
Title
|
|
|
|
Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip
|
|
|
Author
|
|
|
|
|
|
|
Abstract
|
|
|
|
| We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated. |
|
|
|
Language
|
|
|
|
English
|
|
|
Source (journal)
|
|
|
|
Proceedings of the Society of Photo-optical Instrumentation Engineers / SPIE: International Society for Optical Engineering. - Bellingham, Wash.
|
|
|
Source (book)
|
|
|
|
Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA
|
|
|
Publication
|
|
|
|
Bellingham, Wash.
:
SPIE - The International Society for Optical Engineering
,
2012
|
|
|
ISSN
|
|
|
|
0277-786X
|
|
|
ISBN
|
|
|
|
978-0-8194-9096-4
|
|
|
DOI
|
|
|
|
10.1117/12.923562
|
|
|
Volume/pages
|
|
|
|
8414
(2012)
, p. 1-8
|
|
|
Article Reference
|
|
|
|
84140L
|
|
|
ISI
|
|
|
|
000303856600020
|
|
|
Medium
|
|
|
|
E-only publicatie
|
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|