Publication
Title
Shallow donor near a semiconductor surface in the presence of locally spherical scanning tunneling microscope tip
Author
Abstract
We developed a variational approach to investigate the ground state energy and the extend of the wavefunction of a neutral donor located near a semiconductor surface in the presence of scanning tunneling microscope (STM) metallic tip. We apply the effective mass approximation and use a variational wavefunction that takes into account the influence of all image charges that arise due to the presence of a metallic tip. The behavior of the ground state energy when the tip approaches the semiconductor surface is investigated.
Language
English
Source (journal)
Photonics and micro- and naon-structured materials 2011
Source (book)
Conference on Photonics and Micro and Nano-structured Materials, JUN 28-30, 2011, Yerevan, ARMENIA
Publication
2012
Volume/pages
8414(2012), p. 1-8
Article Reference
84140L
ISI
000303856600020
Number
978-0-8194-9096-4
Medium
E-only publicatie
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 22.01.2014
Last edited 03.05.2017
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