Title
Multiscale modeling of radiation damage and annealing in Si samples implanted with 57-Mn radioactive ions Multiscale modeling of radiation damage and annealing in Si samples implanted with 57-Mn radioactive ions
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
conferenceObject
Publication
Subject
Physics
Engineering sciences. Technology
Computer. Automation
Source (journal)
2011 IEEE Nuclear science sympoium and medical imaging conference (NSS/MIC)
Source (book)
IEEE Nuclear Science Symposium/Medical Imaging Conference (NSS/MIC)/18th, International Workshop on Room-Temperature Semiconductor X-Ray and, Gamma-Ray Detectors, OCT 23-29, 2011, Valencia, SPAIN
Volume/pages
(2011) , p. 1754-1756
ISSN
1082-3654
ISBN
978-1-4673-0120-6
ISI
000304755601202
Carrier
E
Target language
English (eng)
Affiliation
University of Antwerp
Abstract
The radiation damage created in silicon materials by Mn-57 -> Fe-57 ion implantation has been studied and characterized by Mossbauer spectroscopy showing four main lines, assigned to: substitutional, interstitial and damaged configuration sites of the implanted ions. Nevertheless, the Mossbauer spectrum of Fe-57 in this materials remains with some ambiguous identification regarding the implantation configurations before and after annealing, specially the damaged configurations and its evolution. In the present work some possible implantation configurations are suggested and evaluated using a multiscale approach by Monte Carlo ion transport and electronic structure calculations within DFT. The proposed implantation environments were evaluated in terms of stability and the Fe-57 hyperfine parameters were calculated to establish the connections with the experimental observations. Good agreement was found between the experimental and the calculated hyperfine parameters for some configurations; suggesting which ones could be the implantation environments before and after sample annealing.
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