Publication
Title
Formation of a nanoscale $SiO_{2}$ capping layer on photoresist lines with an $Ar/SiCl_{4}/O_{2}$ inductively coupled plasma : a modeling investigation
Author
Abstract
 PECVD of a nanoscale SiO2 capping layer using low pressure SiCl4/O-2/Ar plasmas is numerically investigated. The purpose of this capping layer is to restore photoresist profiles with improved line edge roughness. A 2D plasma and Monte Carlo feature profile model are applied for this purpose. The deposited films are calculated for various operating conditions to obtain a layer with desired shape. An increase in pressure results in more isotropic deposition with a higher deposition rate, while a higher power creates a more anisotropic process. Dilution of the gas mixture with Ar does not result in an identical capping layer shape with a thickness linearly correlated to the dilution. Finally, a substrate bias seems to allow proper control of the vertical deposition rate versus sidewall deposition as desired.
Language
English
Source (journal)
Plasma processes and polymers. - Weinheim
Publication
Weinheim : 2014
ISSN
1612-8850
Volume/pages
11:1(2014), p. 52-62
ISI
000330588800006
Full text (Publishers DOI)
Full text (publishers version - intranet only)
UAntwerpen
 Faculty/Department Research group Publication type Subject Affiliation Publications with a UAntwerp address