Title Formation of a nanoscale $SiO_{2}$ capping layer on photoresist lines with an $Ar/SiCl_{4}/O_{2}$ inductively coupled plasma : a modeling investigationFormation of a nanoscale $SiO_{2}$ capping layer on photoresist lines with an $Ar/SiCl_{4}/O_{2}$ inductively coupled plasma : a modeling investigation Author Tinck, Stefan Altamirano-Sánchez, Efrain Schepper, De, Peter Bogaerts, Annemie Faculty/Department Faculty of Sciences. Chemistry Research group Plasma, laser ablation and surface modeling - Antwerp (PLASMANT) Publication type article Publication 2014Weinheim, 2014 Subject Physics Chemistry Source (journal) Plasma processes and polymers. - Weinheim Volume/pages 11(2014):1, p. 52-62 ISSN 1612-8850 ISI 000330588800006 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract PECVD of a nanoscale SiO2 capping layer using low pressure SiCl4/O-2/Ar plasmas is numerically investigated. The purpose of this capping layer is to restore photoresist profiles with improved line edge roughness. A 2D plasma and Monte Carlo feature profile model are applied for this purpose. The deposited films are calculated for various operating conditions to obtain a layer with desired shape. An increase in pressure results in more isotropic deposition with a higher deposition rate, while a higher power creates a more anisotropic process. Dilution of the gas mixture with Ar does not result in an identical capping layer shape with a thickness linearly correlated to the dilution. Finally, a substrate bias seems to allow proper control of the vertical deposition rate versus sidewall deposition as desired. E-info https://repository.uantwerpen.be/docman/iruaauth/e4203e/c1a7163.pdf http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000330588800006&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000330588800006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000330588800006&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle