Title
Formation of a nanoscale <tex>$SiO_{2}$</tex> capping layer on photoresist lines with an <tex>$Ar/SiCl_{4}/O_{2}$</tex> inductively coupled plasma : a modeling investigation
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Weinheim ,
Subject
Physics
Chemistry
Source (journal)
Plasma processes and polymers. - Weinheim
Volume/pages
11(2014) :1 , p. 52-62
ISSN
1612-8850
ISI
000330588800006
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
PECVD of a nanoscale SiO2 capping layer using low pressure SiCl4/O-2/Ar plasmas is numerically investigated. The purpose of this capping layer is to restore photoresist profiles with improved line edge roughness. A 2D plasma and Monte Carlo feature profile model are applied for this purpose. The deposited films are calculated for various operating conditions to obtain a layer with desired shape. An increase in pressure results in more isotropic deposition with a higher deposition rate, while a higher power creates a more anisotropic process. Dilution of the gas mixture with Ar does not result in an identical capping layer shape with a thickness linearly correlated to the dilution. Finally, a substrate bias seems to allow proper control of the vertical deposition rate versus sidewall deposition as desired.
E-info
https://repository.uantwerpen.be/docman/iruaauth/e4203e/c1a7163.pdf
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