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Title
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Formation of a nanoscale capping layer on photoresist lines with an inductively coupled plasma : a modeling investigation
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Author
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Abstract
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| PECVD of a nanoscale SiO2 capping layer using low pressure SiCl4/O-2/Ar plasmas is numerically investigated. The purpose of this capping layer is to restore photoresist profiles with improved line edge roughness. A 2D plasma and Monte Carlo feature profile model are applied for this purpose. The deposited films are calculated for various operating conditions to obtain a layer with desired shape. An increase in pressure results in more isotropic deposition with a higher deposition rate, while a higher power creates a more anisotropic process. Dilution of the gas mixture with Ar does not result in an identical capping layer shape with a thickness linearly correlated to the dilution. Finally, a substrate bias seems to allow proper control of the vertical deposition rate versus sidewall deposition as desired. |
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Language
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English
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Source (journal)
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Plasma processes and polymers. - Weinheim
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Publication
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Weinheim
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2014
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ISSN
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1612-8850
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DOI
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10.1002/PPAP.201300062
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Volume/pages
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11
:1
(2014)
, p. 52-62
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ISI
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000330588800006
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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