Publication
Title
Tensile strained Ge tunnel field-effect transistors: material modeling and numerical device simulation
Author
Abstract
Language
English
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Publication
New York, N.Y. : American Institute of Physics, 2014
ISSN
0021-8979 [print]
1089-7550 [online]
Volume/pages
115:4(2014), p. 1-8
Article Reference
044505
ISI
000331210800113
Medium
E-only publicatie
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 04.04.2014
Last edited 05.05.2018
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