|
Title
|
|
|
|
Phase formation in intermixed NiGe thin films : influence of Ge content and low-temperature nucleation of hexagonal nickel germanides
|
|
|
Author
|
|
|
|
|
|
|
Abstract
|
|
|
|
| In this study, we focus on phase formation in intermixed NiGe thin films as they represent a simplified model of the small intermixed interface layer that is believed to form upon deposition of Ni on Ge and where initial phase formation happens. A combinatorial sputter deposition technique was used to co-deposit a range of intermixed NiGe thin films with Ge concentrations varying between 0 and 50 at.%Ge in a single deposition on both Ge (100) and inert SiO2 substrates. In situ X-ray diffraction and transmission electron microscopy where used to study phase formation. In almost the entire composition range under investigation, crystalline phases where found to be present in the as-deposited films. Between 36 and 48 at.%Ge, high-temperature hexagonal nickel germanides were found to occur metastabily below 300 °C, both on SiO2 and Ge (100) substrates. For Ge concentrations in the range between 36 and 42 at.%, this hexagonal germanide phase was even found to be present at room temperature in the as-deposited films. The results obtained in this work could provide more insight in the phase sequence of a pure Ni film on Ge. |
|
|
|
Language
|
|
|
|
English
|
|
|
Source (journal)
|
|
|
|
Microelectronic engineering. - Amsterdam
|
|
|
Publication
|
|
|
|
Amsterdam
:
2014
|
|
|
ISSN
|
|
|
|
0167-9317
|
|
|
DOI
|
|
|
|
10.1016/J.MEE.2013.09.004
|
|
|
Volume/pages
|
|
|
|
120
(2014)
, p. 168-173
|
|
|
ISI
|
|
|
|
000336697300028
|
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
|
Full text (publisher's version - intranet only)
|
|
|
|
|
|