Publication
Title
Controllable nitrogen doping in as deposited film and its effect on post deposition annealing
Author
Abstract
In order to narrow the band gap of TiO2, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO2 and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO2 and PEALD TiN, the as synthesized TiOxNy films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO2 films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO2 along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.
Language
English
Source (journal)
Journal of vacuum science and technology: A: vacuum surfaces and films. - New York, N.Y., 1983, currens
Publication
New York, N.Y. : 2014
ISSN
0734-2101
Volume/pages
32:1(2014), 7 p.
Article Reference
01A123
ISI
000335847600023
Medium
E-only publicatie
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
[E?say:metaLocaldata.cgzprojectinf]
Counting Atoms in Nanomaterials (COUNTATOMS).
COCOON: Conformal coating of nanoporous materials
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 11.06.2014
Last edited 22.08.2017
To cite this reference