Title
Controllable nitrogen doping in as deposited <tex>$TiO_{2}$</tex> film and its effect on post deposition annealing Controllable nitrogen doping in as deposited <tex>$TiO_{2}$</tex> film and its effect on post deposition annealing
Author
Faculty/Department
Faculty of Sciences. Bioscience Engineering
Publication type
article
Publication
New York, N.Y. ,
Subject
Physics
Biology
Engineering sciences. Technology
Source (journal)
Journal of vacuum science and technology: A: vacuum surfaces and films. - New York, N.Y., 1983, currens
Volume/pages
32(2014) :1 , 7 p.
ISSN
0734-2101
Article Reference
01A123
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
In order to narrow the band gap of TiO2, nitrogen doping by combining thermal atomic layer deposition (TALD) of TiO2 and plasma enhanced atomic layer deposition (PEALD) of TiN has been implemented. By altering the ratio between TALD TiO2 and PEALD TiN, the as synthesized TiOxNy films showed different band gaps (from 1.91 eV to 3.14 eV). In situ x-ray diffraction characterization showed that the crystallization behavior of these films changed after nitrogen doping. After annealing in helium, nitrogen doped TiO2 films crystallized into rutile phase while for the samples annealed in air a preferential growth of the anatase TiO2 along (001) orientation was observed. Photocatalytic tests of the degradation of stearic acid were done to evaluate the effect of N doping on the photocatalytic activity.
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