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Title
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as RRAM material : first principles insights on the working principles
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Author
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Abstract
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| First-principles simulations were employed to gain atomistic insights on the working principles of amorphous HfO2 based Resistive Random Access Memory stack: the nature of the defect responsible for the switching between the High and Low Resistive States has been unambiguously identified to be the substoichiometric Hf sites (commonly called oxygen vacancy-V-O) and the kinetics of the process have been investigated through the study of O diffusion. Also the role of each material layer in the TiN/HfO2/Hf/TiN RRAM stack and the impact of the deposition techniques have been examined: metallic Hf sputtering is needed to provide an oxygen exchange layer that plays the role of defect buffer. TiN shall be a good defect barrier for O but a bad defect buffer layer. A possible scenario to explain the device degradation (switching failure) mechanism has been proposed - the relaxation of the metastable amorphous phase towards crystalline structure leads to denser, more structured cluster that can increase the defect migration barriers. (C) 2013 Elsevier B.V. All rights reserved. |
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Language
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English
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Source (journal)
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Microelectronic engineering. - Amsterdam
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Publication
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Amsterdam
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2014
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ISSN
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0167-9317
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DOI
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10.1016/J.MEE.2013.08.002
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Volume/pages
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120
(2014)
, p. 13-18
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ISI
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000336697300004
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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