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Title
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The interband optical absorption in silicon quantum wells : application of the 30-band k . p model
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Author
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Abstract
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| The interband optical absorption in Si/SiO2 quantum wells is calculated as function of the well width (W) and the evolution from an indirect to a direct gap material as function of the well width is investigated. In order to compute the electron states in the conduction band, the 30-band k . p model is employed, whereas the 6-band Luttinger-Kohn model is used for the hole states. We found that the effective direct band gap in the quantum well agrees very well with the W-2 scaling result of the single-band model. The interband matrix elements for linear polarized light oscillate with the quantum well width, which agrees qualitatively with a single band calculation. Our theoretical results indicate that the absorption can be maximized by a proper choice of the well width. However, the obtained absorption coefficients are at least an order of magnitude smaller than for a typical direct semiconductor even for a well width of 2 nm. (C) 2014 AIP Publishing LLC. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2014
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.4884122
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Volume/pages
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104
:24
(2014)
, 5 p.
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Article Reference
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242103
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ISI
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000337915000033
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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