Title
Epitaxy-enabled vaporliquidsolid growth of tin-doped indium oxide nanowires with controlled orientations Epitaxy-enabled vaporliquidsolid growth of tin-doped indium oxide nanowires with controlled orientations
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Washington ,
Subject
Physics
Chemistry
Engineering sciences. Technology
Source (journal)
Nano letters / American Chemical Society. - Washington
Volume/pages
14(2014) :8 , p. 4342-4351
ISSN
1530-6984
ISI
000340446200022
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Controlling the morphology of nanowires in bottom-up synthesis and assembling them on planar substrates is of tremendous importance for device applications in electronics, photonics, sensing and energy conversion. To date, however, there remain challenges in reliably achieving these goals of orientation-controlled nanowire synthesis and assembly. Here we report that growth of planar, vertical and randomly oriented tin-doped indium oxide (ITO) nanowires can be realized on yttria-stabilized zirconia (YSZ) substrates via the epitaxy-assisted vaporliquidsolid (VLS) mechanism, by simply regulating the growth conditions, in particular the growth temperature. This robust control on nanowire orientation is facilitated by the small lattice mismatch of 1.6% between ITO and YSZ. Further control of the orientation, symmetry and shape of the nanowires can be achieved by using YSZ substrates with (110) and (111), in addition to (100) surfaces. Based on these insights, we succeed in growing regular arrays of planar ITO nanowires from patterned catalyst nanoparticles. Overall, our discovery of unprecedented orientation control in ITO nanowires advances the general VLS synthesis, providing a robust epitaxy-based approach toward rational synthesis of nanowires.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/1ce50c/a452b7c2.pdf
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