Title
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Current-voltage characteristics of armchair Sn nanoribbons
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Author
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Abstract
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Two-dimensional group-IV lattices silicene and germanene are known to share many of graphene's remarkable mechanical and electronic properties. Due to the out-of-plane buckling of the former materials, there are more means of electronic funtionalization, e.g. by applying uniaxial strain or an out-of-plane electric field. We consider monolayer hexagonal Sn (stanene) as an ideal candidate to feasibly implement and exploit graphene physics for nanoelectronic applications: with increased out-of-plane buckling and sizable spin-orbit coupling it lends itself to improved Dirac cone engineering. We investigate the ballistic charge transport regime of armchair Sn nanoribbons, classified according to the ribbon width W = {3m - 1, 3m, 3m + 1} with integer m. We study transport through (non-magnetic) armchair ribbons using a combination of density functional theory and non-equilibrium Green's functions. Sn ribbons have earlier current onsets and carry currents 20% larger than C/Si/Ge-nanoribbons as the contact resistance of these ribbons is found to be comparable. ((c) 2014 WILEY-VCH Verlag GmbH &Co. KGaA, Weinheim) |
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Language
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English
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Source (journal)
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Physica status solidi: rapid research letters. - Berlin
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Publication
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Berlin
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2014
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ISSN
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1862-6254
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DOI
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10.1002/PSSR.201400073
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Volume/pages
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8
:11
(2014)
, p. 931-934
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ISI
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000345274300009
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Full text (Publisher's DOI)
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