Title
Superior reliability of junctionless pFinFETs by reduced oxide electric field Superior reliability of junctionless pFinFETs by reduced oxide electric field
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Source (journal)
IEEE electron device letters
Volume/pages
35(2014) :12 , p. 1179-1181
ISSN
0741-3106
ISI
000345575400006
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Superior reliability of junctionless (JL) compared with inversion-mode field-effect transistors (FETs) is experimentally demonstrated on bulk FinFET wafers. The reduced negative bias temperature instability (NBTI) of JL pFETs outperforms the previously reported best NBTI reliability data obtained with Si channel devices and guarantees 10-year lifetime at typical operating voltages and high temperature. This behavior is understood through the reduced oxide electric field and lessened interaction between charge carriers and oxide traps during device operation. These findings encourage the investigation of JL devices with alternative channels as a promising alternative for 7-nm technology nodes meeting reliability targets.
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