Publication
Title
A hard oxide semiconductor with a direct and narrow bandgap and switchable pn electrical conduction
Author
Abstract
An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
Language
English
Source (journal)
Advanced materials. - Weinheim
Publication
Weinheim : 2014
ISSN
0935-9648
Volume/pages
26:48(2014), p. 8185-8191
ISI
000346480800016
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 13.01.2015
Last edited 24.06.2017
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