Title
A hard oxide semiconductor with a direct and narrow bandgap and switchable pn electrical conduction A hard oxide semiconductor with a direct and narrow bandgap and switchable pn electrical conduction
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Weinheim ,
Subject
Physics
Chemistry
Engineering sciences. Technology
Source (journal)
Advanced materials. - Weinheim
Volume/pages
26(2014) :48 , p. 8185-8191
ISSN
0935-9648
ISI
000346480800016
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
An oxide semiconductor (perovskite-type Mn2O3) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2O3 described is much stronger than the above semiconductors and may find useful applications in different semiconductor devices, e.g., in IR detectors.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/a127c3/9146.pdf
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