Publication
Title
Integrated atomistic chemical imaging and reactive force field molecular dynamic simulations on silicon oxidation
Author
Abstract
In this paper, we quantitatively investigate with atom probe tomography, the effect of temperature on the interfacial transition layer suboxide species due to the thermal oxidation of silicon. The chemistry at the interface was measured with atomic scale resolution, and the changes in chemistry and intermixing at the interface were identified on a nanometer scale. We find an increase of suboxide (SiOx) concentration relative to SiO2 and increased oxygen ingress with elevated temperatures. Our experimental findings are in agreement with reactive force field molecular dynamics simulations. This work demonstrates the direct comparison between atom probe derived chemical profiles and atomistic-scale simulations for transitional interfacial layer of suboxides as a function of temperature.
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2015
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
106:1(2015), 5 p.
Article Reference
011602
ISI
000347976900008
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Project info
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Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 16.01.2015
Last edited 06.12.2017
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