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Title
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Improved source design for p-type tunnel field-effect transistors : towards truly complementary logic
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Author
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Abstract
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| Complementary logic based on tunnel field-effect transistors (TFETs) would drastically reduce power consumption thanks to the TFET's potential to obtain a sub-60 mV/dec subthreshold swing (SS). However, p-type TFETs typically do not meet the performance of n-TFETs for direct bandgap III-V configurations. The p-TFET SS stays well above 60 mV/dec, due to the low density of states in the conduction band. We therefore propose a source configuration in which a highly doped region is maintained only near the tunnel junction. In the remaining part of the source, the hot carriers in the exponential tail of the Fermi-Dirac distribution are blocked by reducing the doping degeneracy, either with a source section with a lower doping concentration or with a heterostructure. We apply this concept to n-p-i-p configurations consisting of In0.53Ga0.47As and an InP-InAs heterostructure. 15-band quantum mechanical simulations predict that the configurations with our source design can obtain sub-60 mV/dec SS, with an on-current comparable to the conventional source design. (C) 2014 AIP Publishing LLC. |
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Language
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English
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Source (journal)
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Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2014
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ISSN
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0003-6951
[print]
1077-3118
[online]
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DOI
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10.1063/1.4904712
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Volume/pages
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105
:24
(2014)
, 4 p.
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Article Reference
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243506
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ISI
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000346643600076
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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