Title
Effect of interface evolution on thermal conductivity of vacuum hot pressed SiC/Al composites
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Weinheim ,
Subject
Physics
Source (journal)
Advanced engineering materials. - Weinheim
Volume/pages
17(2015) :7 , p. 1077-1085
ISSN
1438-1656
ISI
000357680700019
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The SiC/Al composites have been fabricated by a vacuum hot pressing (VHP) process in order to study the effect of interface evolution on the global thermal conductivity (TC). By optimizing the VHP parameters of sintering temperature and time, the three different kinds of SiC/Al interface configurations, that is, non-bonded, diffusion-bonded, and reaction-bonded interfaces, are formed and identified by measurement of relative density, X-ray diffraction, scanning and (high-resolution) transmission electron microscopy. The VHPed composite sintered at 655 °C for 60 min is fully dense and presents a tightly-adhered and clean SiC/Al interface at the nanoscale, the ideal diffusion-bonded interface being the most favorable for minimizing interfacial thermal resistance, which in turn results in the highest TC of around 270 W/mK.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/5aa5e1/9365.pdf
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