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Title
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Magnetotransport across the metal-graphene hybrid interface and its modulation by gate voltage
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Author
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Abstract
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| The graphene-metal contact is very important for optimizing the performance of graphene based electronic devices. However, it is difficult to probe the properties of the graphene/metal interface directly via transport measurements in traditional graphene lateral devices, because the dominated transport channel is graphene, not the interface. Here, we employ the Au/graphene/Au vertical and lateral hybrid structure to unveil the metal-graphene interface properties, where the transport is dominated by the charge carriers across the interface. The magnetoresistance (MR) of Au/monolayer graphene/Au and Au/stacked two-layered graphene/Au devices is measured and modulated by gate voltage, demonstrating that the interface is a device. The gate-tunable MR is identified from the graphene lying on the SiO2 substrate and underneath the top metal electrode. Our unique structures couple the in-plane and out-of-plane transport and display linear MR with small amplitude oscillations at low temperatures. Under a magnetic field, the electronic coupling between the graphene edge states and the electrode leads to the appearance of quantum oscillations. Our results not only provide a new pathway to explore the intrinsic transport mechanism at the graphene/metal interface but also open up new vistas of magnetoelectronics. |
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Language
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English
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Source (journal)
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Nanoscale / Royal Society of Chemistry [London] - Cambridge, 2009, currens
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Publication
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Cambridge
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2015
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ISSN
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2040-3364
[print]
2040-3372
[online]
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DOI
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10.1039/C5NR00223K
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Volume/pages
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7
:12
(2015)
, p. 5516-5524
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ISI
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000351372400050
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Pubmed ID
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25735487
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Full text (Publisher's DOI)
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