Title
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Boron-rich inclusions and boron distribution in HPHT polycrystalline superconducting diamond
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Author
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Abstract
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Polycrystalline boron-doped superconducting diamond, synthesized at high pressure and high temperature (HPHT) via a reaction of a single piece of crystalline boron with monolithic graphite, has been investigated by analytical transmission electron microscopy. The local boron distribution and boron environment have been studied by a combination of (scanning) transmission electron microscopy ((S)TEM) and spatially resolved electron energy-loss spectroscopy (EELS). High resolution TEM imaging and EELS elemental mapping have established, for the first time, the presence of largely crystalline diamond-diamond grain boundaries within the material and have evidenced the presence of substitutional boron dopants within individual diamond grains. Confirmation of the presence of substitutional B dopants has been obtained through comparison of acquired boron K-edge EELS fine structures with known references. This confirmation is important to understand the origin of superconductivity in polycrystalline B-doped diamond. In addition to the substitutional boron doping, boron-rich inclusions and triple-points, both amorphous and crystalline, with chemical compositions close to boron carbide B4C, are evidenced. (C) 2015 Elsevier Ltd. All rights reserved. |
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Language
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English
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Source (journal)
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Carbon. - Oxford
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Publication
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Oxford
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2015
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ISSN
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0008-6223
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DOI
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10.1016/J.CARBON.2015.01.034
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Volume/pages
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86
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, p. 156-162
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ISI
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000352922700019
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Full text (Publisher's DOI)
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Full text (publisher's version - intranet only)
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