Title
Engineering the electronic properties of silicene by tuning the composition of <tex>$MoX_{2}$</tex> and GaX (X = S,Se,Te) chalchogenide templates Engineering the electronic properties of silicene by tuning the composition of <tex>$MoX_{2}$</tex> and GaX (X = S,Se,Te) chalchogenide templates
Author
Faculty/Department
Faculty of Sciences. Chemistry
Publication type
article
Publication
Bristol :IOP Publishing ,
Subject
Physics
Source (journal)
2D materials. - Bristol, 2014, currens
Volume/pages
1(2014) :1 , 11 p.
ISSN
2053-1583
2053-1583
Article Reference
011010
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
By using first-principles simulations, we investigate the interaction of a 2D silicon layer with two classes of chalcogenide-layered compounds, namely MoX2 and GaX (X = S, Se, Te). A rather weak (van der Waals) interaction between the silicene layers and the chalcogenide layers is predicted. We found that the buckling of the silicene layer is correlated to the lattice mismatch between the silicene layer and the MoX2 or GaX template. The electronic properties of silicene on these different templates largely depend on the buckling of the silicene layer: highly buckled silicene on MoS2 is predicted to be metallic, while low buckled silicene on GaS and GaSe is predicted to be semi-metallic, with preserved Dirac cones at the K points. These results indicate new routes for artificially engineering silicene nanosheets, providing tailored electronic properties of this 2D layer on non-metallic substrates. These non-metallic templates also open the way to the possible integration of silicene in future nanoelectronic devices.
E-info
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000353649900011&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848
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https://repository.uantwerpen.be/docman/iruaauth/652caa/c48126032.pdf
Handle