Title
Computer simulation of the single crystal surface modification and analysis at grazing low-energy ion bombardment Computer simulation of the single crystal surface modification and analysis at grazing low-energy ion bombardment
Author
Faculty/Department
Faculty of Sciences. Biology
Publication type
conferenceObject
Publication
Bristol :Iop publishing ltd ,
Subject
Physics
Source (journal)
PROCESSES IN INORGANIC MATERIALS
IOP conference series : materials science and engineering. - Bristol, 2009, currens
Source (book)
International Scientific Conference on Radiation-Thermal Effects and, Processes in Inorganic Materials, NOV 03-08, 2014, Tomsk, RUSSIA
Volume/pages
81(2015) , 8 p.
ISSN
1757-8981
ISI
000354946500023
Carrier
E
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The specific peculiarities of 0.5-10 keV Ne+, Ar+, Kr+, Be+ and Se+ ions scattering, sputtering and implantation processes at grazing ion bombardment of GaAs (001), Si(001), SiC(001) and Cu(100) surfaces and their possible application for the surface modification and analysis have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E-0 = 0.5-5 keV) and angle of incidence (psi = 0-30 degrees) counted from a target surface have been calculated. The colliding particles mass ratio influence on the energy losses of scattering particles, sputtering yields and near-surface depth distributions of implanted particles is established. It was shown that in the case of grazing ion bombardment the layer-by-layer sputtering is possible and its optimum are observed within the small angle range of the glancing angles near the threshold sputtering angle. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.
E-info
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Full text (open access)
https://repository.uantwerpen.be/docman/irua/3e21db/126391.pdf
Handle