Publication
Title
Computer simulation of the single crystal surface modification and analysis at grazing low-energy ion bombardment
Author
Abstract
The specific peculiarities of 0.5-10 keV Ne+, Ar+, Kr+, Be+ and Se+ ions scattering, sputtering and implantation processes at grazing ion bombardment of GaAs (001), Si(001), SiC(001) and Cu(100) surfaces and their possible application for the surface modification and analysis have been studied by computer simulation. Sputtering yields in the primary knock-on recoil atoms regime versus the initial energy of incident ions (E-0 = 0.5-5 keV) and angle of incidence (psi = 0-30 degrees) counted from a target surface have been calculated. The colliding particles mass ratio influence on the energy losses of scattering particles, sputtering yields and near-surface depth distributions of implanted particles is established. It was shown that in the case of grazing ion bombardment the layer-by-layer sputtering is possible and its optimum are observed within the small angle range of the glancing angles near the threshold sputtering angle. Comparative studies of layer-by-layer sputtering for Si(001) and SiC(001) surfaces versus the initial energy of incident ions as well as an effective sputtering and sputtering threshold are discussed.
Language
English
Source (journal)
IOP conference series : materials science and engineering. - Bristol, 2009, currens
PROCESSES IN INORGANIC MATERIALS
Source (book)
International Scientific Conference on Radiation-Thermal Effects and, Processes in Inorganic Materials, NOV 03-08, 2014, Tomsk, RUSSIA
Publication
Bristol : Iop publishing ltd, 2015
ISSN
1757-8981 [print]
1757-899X [online]
Volume/pages
81(2015), 8 p.
ISI
000354946500023
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 02.07.2015
Last edited 22.07.2017
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