Title
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Electronic band structures and native point defects of ultrafine ZnO nanocrystals
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Author
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Abstract
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Ultrafine ZnO nanocrystals with a thickness down to 0.25 nm are grown by a metalorganic chemical vapor deposition method. Electronic band structures and native point defects of ZnO nanocrystals are studied by a combination of scanning tunneling microscopy/spectroscopy and first-principles density functional theory calculations. Below a critical thickness of nm ZnO adopts a graphitic-like structure and exhibits a wide band gap similar to its wurtzite counterpart. The hexagonal wurtzite structure, with a well-developed band gap evident from scanning tunneling spectroscopy, is established for a thickness starting from similar to 1.4 nm. With further increase of the thickness to 2 nm, V-O-V-Zn defect pairs are easily produced in ZnO nanocrystals due to the self-compensation effect in highly doped semiconductors. |
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Language
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English
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Source (journal)
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ACS applied materials and interfaces. - -
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Publication
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2015
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ISSN
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1944-8244
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DOI
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10.1021/ACSAMI.5B02545
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Volume/pages
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7
:19
(2015)
, p. 10617-10622
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ISI
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000355055000063
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Pubmed ID
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25923131
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Full text (Publisher's DOI)
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Full text (open access)
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Full text (publisher's version - intranet only)
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