Publication
Title
Strain accommodation through facet matching in ramp-edge junctions
Author
Abstract
Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3° tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.
Language
English
Source (journal)
APL materials
Publication
2015
ISSN
2166-532X
Volume/pages
3:8(2015), 7 p.
Article Reference
086101
ISI
000360656800009
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Project info
ESTEEM 2 - Enabling science and technology through European electron microscopy.
Counting Atoms in Nanomaterials (COUNTATOMS).
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 01.10.2015
Last edited 06.12.2017
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