Title
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Strain accommodation through facet matching in ramp-edge junctions
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Author
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Abstract
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Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3° tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed. |
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Language
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English
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Source (journal)
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APL materials
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Publication
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2015
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ISSN
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2166-532X
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DOI
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10.1063/1.4927796
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Volume/pages
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3
:8
(2015)
, 7 p.
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Article Reference
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086101
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ISI
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000360656800009
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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