Title
Strain accommodation through facet matching in <tex>$La_{1.85}Sr_{0.15}CuO_{4}/Nd_{1.85}Ce_{0.15}CuO_{4}$</tex> ramp-edge junctions
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Subject
Physics
Engineering sciences. Technology
Source (journal)
APL materials
Volume/pages
3(2015) :8 , 7 p.
ISSN
2166-532X
2166-532X
Article Reference
086101
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Scanning nano-focused X-ray diffraction and high-angle annular dark-field scanning transmission electron microscopy are used to investigate the crystal structure of ramp-edge junctions between superconducting electron-doped Nd1.85Ce0.15CuO4 and superconducting hole-doped La1.85Sr0.15CuO4 thin films, the latter being the top layer. On the ramp, a new growth mode of La1.85Sr0.15CuO4 with a 3.3° tilt of the c-axis is found. We explain the tilt by developing a strain accommodation model that relies on facet matching, dictated by the ramp angle, indicating that a coherent domain boundary is formed at the interface. The possible implications of this growth mode for the creation of artificial domains in morphotropic materials are discussed.
Full text (open access)
https://repository.uantwerpen.be/docman/irua/f6514d/3fc9f8d8.pdf
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