Title
Modeling charge transfer at organic donor-acceptor semiconductor interfaces
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. :American Institute of Physics ,
Subject
Physics
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Volume/pages
100(2012) :20 , 4 p.
ISSN
0003-6951
1077-3118
0003-6951
Article Reference
203302
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Abstract
We develop an integer charge transfer model for the potential steps observed at interfaces between donor and acceptor molecular semiconductors. The potential step can be expressed as the difference between the Fermi energy pinning levels of electrons on the acceptor material and holes on the donor material, as determined from metal-organic semiconductor contacts. These pinning levels can be obtained from simple density functional theory calculations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717985]
Full text (open access)
https://repository.uantwerpen.be/docman/irua/5d18b3/128330.pdf
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