Publication
Title
Modeling charge transfer at organic donor-acceptor semiconductor interfaces
Author
Abstract
We develop an integer charge transfer model for the potential steps observed at interfaces between donor and acceptor molecular semiconductors. The potential step can be expressed as the difference between the Fermi energy pinning levels of electrons on the acceptor material and holes on the donor material, as determined from metal-organic semiconductor contacts. These pinning levels can be obtained from simple density functional theory calculations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4717985]
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2012
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
100:20(2012), 4 p.
Article Reference
203302
ISI
000304265000080
Medium
E-only publicatie
Full text (Publishers DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Publication type
Subject
External links
Web of Science
Record
Identification
Creation 26.10.2015
Last edited 09.05.2017