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Title
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Full-zone spectral envelope function formalism for the optimization of line and point tunnel field-effect transistors
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Author
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Abstract
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| Efficient quantum mechanical simulation of tunnel field-effect transistors (TFETs) is indispensable to allow for an optimal configuration identification. We therefore present a full-zone 15-band quantum mechanical solver based on the envelope function formalism and employing a spectral method to reduce computational complexity and handle spurious solutions. We demonstrate the versatility of the solver by simulating a 40 nm wide In0.53Ga0.47As lineTFET and comparing it to p-n-i-n configurations with various pocket and body thicknesses. We find that the lineTFET performance is not degraded compared to semi-classical simulations. Furthermore, we show that a suitably optimized p-n-i-n TFET can obtain similar performance to the lineTFET. (C) 2015 AIP Publishing LLC. |
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Language
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English
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Source (journal)
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Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
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Publication
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New York, N.Y.
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American Institute of Physics
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2015
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ISSN
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0021-8979
[print]
1089-7550
[online]
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DOI
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10.1063/1.4931890
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Volume/pages
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118
:13
(2015)
, 7 p.
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Article Reference
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134502
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ISI
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000362668400025
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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