Title Surface-facet-dependent phonon deformation potential in individual strained topological insulator $Bi_{2}Se_{3}$ nanoribbons Author Yan, Yuan Zhou, Xu Jin, Han Li, Cai-Zhen Ke, Xiaoxing Van Tendeloo, Gustaaf Liu, Kaihui Yu, Dapeng Dressel, Martin Liao, Zhi-Min Faculty/Department Faculty of Sciences. Physics Publication type article Publication 2015 2015 Subject Physics Chemistry Engineering sciences. Technology Source (journal) ACS nano Volume/pages 9(2015) :10 , p. 10244-10251 ISSN 1936-0851 ISI 000363915300079 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract Strain is an important method to tune the properties of topological insulators. For example, compressive strain can induce superconductivity in Bi2Se3 bulk material. Topological insulator nanostructures are the superior candidates to utilize the unique surface states due to the large surface to volume ratio. Therefore, it is highly desirable to monitor the local strain effects in individual topological insulator nanostructures. Here, we report the systematical micro-Raman spectra of single strained Bi2Se3 nanoribbons with different thicknesses and different surface facets, where four optical modes are resolved in both Stokes and anti-Stokes Raman spectral lines. A striking anisotropy of the strain dependence is observed in the phonon frequency of strained Bi2Se3 nanoribbons grown along the ⟨112̅0⟩ direction. The frequencies of the in-plane Eg2 and out-of-plane A1g1 modes exhibit a nearly linear blue-shift against bending strain when the nanoribbon is bent along the ⟨112̅0⟩ direction with the curved {0001} surface. In this case, the phonon deformation potential of the Eg2 phonon for 100 nm-thick Bi2Se3 nanoribbon is up to 0.94 cm1/%, which is twice of that in Bi2Se3 bulk material (0.52 cm1/%). Our results may be valuable for the strain modulation of individual topological insulator nanostructures. Full text (open access) https://repository.uantwerpen.be/docman/irua/873de1/129216_2016_12_01.pdf E-info http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000363915300079&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000363915300079&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000363915300079&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle