Publication
Title
Veselago lensing in graphene with a p-n junction : classical versus quantum effects
Author
Abstract
The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface, and different gate potential profiles. Furthermore, the influence of scattering by both short-and long-range impurities is considered. (C) 2015 AIP Publishing LLC.
Language
English
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Publication
New York, N.Y. : American Institute of Physics, 2015
ISSN
0021-8979 [print]
1089-7550 [online]
Volume/pages
118:15(2015), 9 p.
Article Reference
154308
ISI
000363535800022
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
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Publications with a UAntwerp address
External links
Web of Science
Record
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Creation 09.12.2015
Last edited 18.12.2017
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