Title
Veselago lensing in graphene with a p-n junction : classical versus quantum effects Veselago lensing in graphene with a p-n junction : classical versus quantum effects
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. :American Institute of Physics ,
Subject
Physics
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Volume/pages
118(2015) :15 , 9 p.
ISSN
0021-8979
1089-7550
0021-8979
Article Reference
154308
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The feasibility of Veselago lensing in graphene with a p-n junction is investigated numerically for realistic injection leads. Two different set-ups with two narrow leads are considered with absorbing or reflecting side edges. This allows us to separately determine the influence of scattering on electron focusing for the edges and the p-n interface. Both semiclassical and tight-binding simulations show a distinctive peak in the transmission probability that is attributed to the Veselago lensing effect. We investigate the robustness of this peak on the width of the injector, the position of the p-n interface, and different gate potential profiles. Furthermore, the influence of scattering by both short-and long-range impurities is considered. (C) 2015 AIP Publishing LLC.
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Full text (open access)
https://repository.uantwerpen.be/docman/irua/f9e8b8/129452.pdf
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