Title
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Fluorographane : a promising material for bipolar doping of
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Author
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Abstract
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Using first principles calculations we investigate the structural and electronic properties of interfaces between fluorographane and MoS2. Unsymmetrical functionalization of graphene with H and F results in an intrinsic dipole moment perpendicular to the plane of the buckled graphene skeleton. Depending on the orientation of this dipole moment, the electronic properties of a physically absorbed MoS2 monolayer can be switched from n-to p-type or vice versa. We show that one can realize vanishing n-type/p-type Schottky barrier heights when contacting MoS2 to fluorographane. By applying a perpendicular electric field, the size of the Schottky barrier and the degree of doping can be tuned. Our calculations indicate that a fluorographane monolayer is a promising candidate for bipolar doping of MoS2, which is vital in the design of novel technological applications based on two-dimensional materials. |
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Language
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English
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Source (journal)
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Physical chemistry, chemical physics / Royal Society of Chemistry [London] - Cambridge, 1999, currens
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Publication
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Cambridge
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The Royal Society of Chemistry
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2015
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ISSN
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1463-9076
[print]
1463-9084
[online]
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DOI
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10.1039/C5CP04438C
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Volume/pages
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17
:41
(2015)
, p. 27636-27641
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ISI
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000363193800043
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Pubmed ID
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26425786
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Full text (Publisher's DOI)
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Full text (open access)
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Full text (publisher's version - intranet only)
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