Title Impact of low-dose electron irradiation on $n^{+}p$ silicon strip sensors Impact of low-dose electron irradiation on $n^{+}p$ silicon strip sensors Author Adam, W. Bergauer, T. Dragicevic, M. Alderweireldt, S. Beaumont, W. Janssen, X. Luyckx, S. Van Mechelen, P. Van Remortel, N. Van Spilbeeck, A. et al. Faculty/Department Faculty of Sciences. Physics Publication type article Publication 2015 2015 Subject Physics Chemistry Engineering sciences. Technology Source (journal) NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT Volume/pages 803(2015) , p. 100-112 ISSN 0168-9002 ISI 000363464600014 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract The response of n(+)p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 im thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 ifm, and both p-stop and p-spray isolation of the n strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 degrees C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxidecharge density due to the ionization of the SiO2 by the radiation from the 13 source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n'p strip sensors is discussed. (C) 2015 Elsevier B.V. E-info http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000363464600014&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000363464600014&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Full text (open access) https://repository.uantwerpen.be/docman/irua/a07543/129479.pdf E-info http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000363464600014&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle