Publication
Title
Impact of low-dose electron irradiation on silicon strip sensors
Author
Institution/Organisation
CMS Collaboration
Abstract
The response of n(+)p silicon strip sensors to electrons from a Sr-90 source was measured using a multi-channel read-out system with 25 ns sampling time. The measurements were performed over a period of several weeks, during which the operating conditions were varied. The sensors were fabricated by Hamamatsu Photonics on 200 im thick float-zone and magnetic-Czochralski silicon. Their pitch was 80 ifm, and both p-stop and p-spray isolation of the n strips were studied. The electrons from the Sr-90 source were collimated to a spot with a full-width-at-half-maximum of 2 mm at the sensor surface, and the dose rate in the SiO2 at the maximum was about 50 Gy(SiO2)/d. After only a few hours of making measurements, significant changes in charge collection and charge sharing were observed. Annealing studies, with temperatures up to 80 degrees C and annealing times of 18 h showed that the changes can only be partially annealed. The observations can be qualitatively explained by the increase of the positive oxidecharge density due to the ionization of the SiO2 by the radiation from the 13 source. TCAD simulations of the electric field in the sensor for different oxide-charge densities and different boundary conditions at the sensor surface support this explanation. The relevance of the measurements for the design of n'p strip sensors is discussed. (C) 2015 Elsevier B.V.
Language
English
Source (journal)
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS
SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
Publication
2015
Volume/pages
803(2015), p. 100-112
ISI
000363464600014
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 09.12.2015
Last edited 04.10.2017
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