Title
Quantum tunneling between bent semiconductor nanowiresQuantum tunneling between bent semiconductor nanowires
Author
Faculty/Department
Faculty of Sciences. Physics
Research group
Condensed Matter Theory
Department of Physics
Publication type
article
Publication
New York, N.Y. :American Institute of Physics,
Subject
Physics
Source (journal)
Journal of applied physics / American Institute of Physics. - New York, N.Y., 1937, currens
Volume/pages
118(2015):17, 8 p.
ISSN
0021-8979
1089-7550
0021-8979
Article Reference
174301
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We theoretically investigate the electronic transport properties of two closely spaced L-shaped semiconductor quantum wires, for different configurations of the output channel widths as well as the distance between the wires. Within the effective-mass approximation, we solve the time-dependent Schrodinger equation using the split-operator technique that allows us to calculate the transmission probability, the total probability current, the conductance, and the wave function scattering between the energy subbands. We determine the maximum distance between the quantum wires below which a relevant non-zero transmission is still found. The transmission probability and the conductance show a strong dependence on the width of the output channel for small distances between the wires. (C) 2015 AIP Publishing LLC.
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