Title
Field effect and strongly localized carriers in the metal-insulator transition material <tex>$VO_{2}$</tex>
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
New York, N.Y. ,
Subject
Physics
Source (journal)
Physical review letters. - New York, N.Y.
Volume/pages
115(2015) :19 , 6 p.
ISSN
0031-9007
0031-9007
Article Reference
196401
ISI
000364024800013
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO2 has remained elusive. Here we report its measurement enabled by epitaxial VO2 and atomic layer deposited high-kappa dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to similar to 5 x 10(13) cm(-2) which are strongly localized, as shown by their low, thermally activated mobility (similar to 1 x 10(-3) cm(2)/Vs at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto) electronics of VO2.
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Full text (open access)
https://repository.uantwerpen.be/docman/irua/eb85c4/129547.pdf
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Handle