Publication
Title
Field effect and strongly localized carriers in the metal-insulator transition material
Author
Abstract
The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO2 has remained elusive. Here we report its measurement enabled by epitaxial VO2 and atomic layer deposited high-kappa dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to similar to 5 x 10(13) cm(-2) which are strongly localized, as shown by their low, thermally activated mobility (similar to 1 x 10(-3) cm(2)/Vs at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto) electronics of VO2.
Language
English
Source (journal)
Physical review letters. - New York, N.Y.
Publication
New York, N.Y. : 2015
ISSN
0031-9007
Volume/pages
115:19(2015), 6 p.
Article Reference
196401
ISI
000364024800013
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 09.12.2015
Last edited 17.07.2017
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