Title
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Field effect and strongly localized carriers in the metal-insulator transition material
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Author
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Abstract
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The intrinsic field effect, the change in surface conductance with an applied transverse electric field, of prototypal strongly correlated VO2 has remained elusive. Here we report its measurement enabled by epitaxial VO2 and atomic layer deposited high-kappa dielectrics. Oxygen migration, joule heating, and the linked field-induced phase transition are precluded. The field effect can be understood in terms of field-induced carriers with densities up to similar to 5 x 10(13) cm(-2) which are strongly localized, as shown by their low, thermally activated mobility (similar to 1 x 10(-3) cm(2)/Vs at 300 K). These carriers show behavior consistent with that of Holstein polarons and strongly impact the (opto) electronics of VO2. |
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Language
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English
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Source (journal)
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Physical review letters. - New York, N.Y., 1958, currens
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Publication
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New York, N.Y.
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American Physical Society
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2015
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ISSN
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0031-9007
[print]
1079-7114
[online]
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DOI
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10.1103/PHYSREVLETT.115.196401
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Volume/pages
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115
:19
(2015)
, 6 p.
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Article Reference
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196401
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ISI
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000364024800013
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Pubmed ID
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26588400
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Medium
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E-only publicatie
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Full text (Publisher's DOI)
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Full text (open access)
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