Title A parametric model for reactive high-power impulse magnetron sputtering of films A parametric model for reactive high-power impulse magnetron sputtering of films Author Kozák, Tomáš Vlček, Jaroslav Faculty/Department Faculty of Sciences. Chemistry Publication type article Publication 2016 London , 2016 Subject Physics Source (journal) Journal of physics: D: applied physics. - London Volume/pages 49(2016) :5 , 18 p. ISSN 0022-3727 0022-3727 Article Reference 055202 Carrier E-only publicatie Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract We present a time-dependent parametric model for reactive HiPIMS deposition of films. Specific features of HiPIMS discharges and a possible increase in the density of the reactive gas in front of the reactive gas inlets placed between the target and the substrate are considered in the model. The model makes it possible to calculate the compound fractions in two target layers and in one substrate layer, and the deposition rate of films at fixed partial pressures of the reactive and inert gas. A simplified relation for the deposition rate of films prepared using a reactive HiPIMS is presented. We used the model to simulate controlled reactive HiPIMS depositions of stoichiometric $\text{Zr}{{\text{O}}_{2}}$ films, which were recently carried out in our laboratories with two different configurations of the ${{\text{O}}_{2}}$ inlets in front of the sputtered target. The repetition frequency was 500 Hz at the deposition-averaged target power densities of 5 Wcm−2and 50 Wcm−2 with a pulse-averaged target power density up to 2 kWcm−2. The pulse durations were 50 μs and 200 μs. Our model calculations show that the to-substrate ${{\text{O}}_{2}}$ inlet provides systematically lower compound fractions in the target surface layer and higher compound fractions in the substrate surface layer, compared with the to-target ${{\text{O}}_{2}}$ inlet. The low compound fractions in the target surface layer (being approximately 10% at the deposition-averaged target power density of 50 Wcm−2 and the pulse duration of 200 μs) result in high deposition rates of the films produced, which are in agreement with experimental values. Full text (open access) https://repository.uantwerpen.be/docman/irua/d55093/130059.pdf E-info https://repository.uantwerpen.be/docman/iruaauth/81a327/130059.pdf http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000368944100016&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000368944100016&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000368944100016&DestLinkType=CitingArticles&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle