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Title
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Selective plasma oxidation of ultrasmall Si nanowires
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Author
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Abstract
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| Device performance of Si|SiOx coreshell based nanowires critically depends on the exact control over the oxide thickness. Low-temperature plasma oxidation is a highly promising alternative to thermal oxidation allowing for improved control over the oxidation process, in particular for ultrasmall Si nanowires. We here elucidate the room temperature plasma oxidation mechanisms of ultrasmall Si nanowires using hybrid molecular dynamics/force-bias Monte Carlo simulations. We demonstrate how the oxidation and concurrent water formation mechanisms are a function of the oxidizing plasma species, and we demonstrate how the resulting coreshell oxide thickness can be controlled through these species. A new mechanism of water formation is discussed in detail. The results provide a detailed atomic level explanation of the oxidation process of highly curved Si surfaces. These results point out a route toward plasma-based formation of ultrathin coreshell Si|SiOx nanowires at room temperature. |
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Language
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English
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Source (journal)
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The journal of physical chemistry: C : nanomaterials and interfaces. - Washington, D.C., 2007, currens
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Publication
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Washington, D.C.
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2016
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ISSN
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1932-7447
[print]
1932-7455
[online]
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DOI
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10.1021/ACS.JPCC.5B11027
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Volume/pages
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120
:1
(2016)
, p. 472-477
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ISI
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000368562200057
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Full text (Publisher's DOI)
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Full text (open access)
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