Title
Mahan polaritons and their lifetime due to hole recoil Mahan polaritons and their lifetime due to hole recoil
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Berlin ,
Subject
Physics
Source (journal)
European physical journal : D : atomic, molecular and optical physics. - Berlin
Volume/pages
69(2015) :11 , 7 p.
ISSN
1434-6060
1434-6060
Article Reference
243
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
We present a theoretical study on polaritons in doped semiconductor microcavities, focussing on a cavity mode that is resonant with the Fermi edge. In agreement with experimental results, the strong light-matter coupling is maintained under very high doping within our ladder diagram approximation. In particular, we find that the polaritons result from the strong admixing of the cavity mode with the Mahan exciton. The upper Mahan polariton, lying in the electron-hole continuum, always remains visible and has a linewidth due to free interband electron-hole creation. The lower Mahan polariton acquires a finite lifetime due to relaxation of the valence band hole if the electron density exceeds a certain critical value. However, if the Rabi splitting exceeds the inverse hole recoil time, the lower polariton lifetime is only limited by the cavity properties.
E-info
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https://repository.uantwerpen.be/docman/iruaauth/006c43/131035.pdf
Handle