Title
Exciton pumping across type-I gallium chalcogenide heterojunctions Exciton pumping across type-I gallium chalcogenide heterojunctions
Author
Faculty/Department
Faculty of Sciences. Physics
Publication type
article
Publication
Bristol ,
Subject
Physics
Engineering sciences. Technology
Source (journal)
Nanotechnology. - Bristol
Volume/pages
27(2016) :6 , 7 p.
ISSN
0957-4484
0957-4484
Article Reference
065203
Carrier
E-only publicatie
Target language
English (eng)
Full text (Publishers DOI)
Affiliation
University of Antwerp
Abstract
Quasi-two-dimensional gallium chalcogenide heterostructures are created by transferring exfoliated few-layer GaSe onto bulk GaTe sheets. Luminescence spectroscopy measurements reveal that the light emission from underlying GaTe layers drastically increases on heterojunction regions where GaSe layers make contact with the GaTe. Density functional theory (DFT) and band offset calculations show that conduction band minimum (CBM) (valance band maximum (VBM)) values of GaSe are higher (lower) in energy compared to GaTe, forming type-I band alignment at the interface. Consequently, GaSe layers provide photo-excited electrons and holes to GaTe sheets through relatively large built-in potential at the interface, increasing overall exciton population and light emission from GaTe. Observed results are not specific to the GaSe/GaTe system but observed on GaS/GaSe heterolayers with type-I band alignment. Observed experimental findings and theoretical studies provide unique insights into interface effects across dissimilar gallium chalcogenides and offer new ways to boost optical performance by simple epitaxial coating.
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