|
Title
|
|
|
|
Gate tunable layer selectivity of transport in bilayer graphene nanostructures
|
|
|
Author
|
|
|
|
|
|
|
Abstract
|
|
|
|
| Recently it was found that bilayer graphene may exhibit regions with and without van der Waals coupling between the two layers. We show that such structures can exhibit a strong layer selectivity when current flows through the coupled region and that this selectivity can be tuned by means of electrostatic gating. Analysing how this effect depends on the type of bilayer stacking, the potential on the gates and the smoothness of the boundary between the coupled and decoupled regions, we show that nearly perfect layer selectivity is achievable in these systems. This effect can be further used to realise a tunable layer switch. |
|
|
|
Language
|
|
|
|
English
|
|
|
Source (journal)
|
|
|
|
Europhysics letters / Société européenne de physique. - Les Ulis, 1986, currens
|
|
|
Publication
|
|
|
|
Les Ulis
:
Les éditions de physique
,
2016
|
|
|
ISSN
|
|
|
|
0295-5075
1286-4854
|
|
|
DOI
|
|
|
|
10.1209/0295-5075/113/17006
|
|
|
Volume/pages
|
|
|
|
113
:1
(2016)
, 5 p.
|
|
|
Article Reference
|
|
|
|
17006
|
|
|
ISI
|
|
|
|
000371479500024
|
|
|
Medium
|
|
|
|
E-only publicatie
|
|
|
Full text (Publisher's DOI)
|
|
|
|
|
|
|
Full text (open access)
|
|
|
|
|
|