Publication
Title
Comparison of short-channel effects in monolayer based junctionless and inversion-mode field-effect transistors
Author
Abstract
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2016
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
108:2(2016), 4 p.
Article Reference
023506
ISI
000370258400056
Medium
E-only publicatie
Full text (Publisher's DOI)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 05.04.2016
Last edited 24.11.2018
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