Publication
Title
Domain selectivity in $BiFeO_{3}$ thin films by modified substrate termination
Author
Abstract
 Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers.
Language
English
Source (journal)
Publication
Weinheim : 2016
ISSN
1616-301X
Volume/pages
26:17(2016), p. 2882-2889
ISI
000377587800011
Full text (Publisher's DOI)
Full text (publisher's version - intranet only)
UAntwerpen
 Faculty/Department Research group [E?say:metaLocaldata.cgzprojectinf] Publication type Subject Affiliation Publications with a UAntwerp address