Title Domain selectivity in $BiFeO_{3}$ thin films by modified substrate termination Author Solmaz, Alim Huijben, Mark Koster, Gertjan Egoavil, Ricardo Gauquelin, Nicolas Van Tendeloo, Gustaaf Verbeeck, Jo Noheda, Beatriz Rijnders, Guus Faculty/Department Faculty of Sciences. Physics Publication type article Publication 2016 Weinheim , 2016 Subject Physics Chemistry Engineering sciences. Technology Source (journal) Advanced functional materials. - Weinheim Volume/pages 26(2016) :17 , p. 2882-2889 ISSN 1616-301X ISI 000377587800011 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract Ferroelectric domain formation is an essential feature in ferroelectric thin films. These domains and domain walls can be manipulated depending on the growth conditions. In rhombohedral BiFeO3 thin films, the ordering of the domains and the presence of specific types of domain walls play a crucial role in attaining unique ferroelectric and magnetic properties. In this study, controlled ordering of domains in BiFeO3 film is presented, as well as a controlled selectivity between two types of domain walls is presented, i.e., 71° and 109°, by modifying the substrate termination. The experiments on two different substrates, namely SrTiO3 and TbScO3, strongly indicate that the domain selectivity is determined by the growth kinetics of the initial BiFeO3 layers. E-info https://repository.uantwerpen.be/docman/iruaauth/464496/132641.pdf http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000377587800011&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000377587800011&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Handle