| Title |
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Uniform strain in heterostructure tunnel field-effect transistors
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| Author |
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| Abstract |
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| Language |
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English
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| Source (journal) |
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IEEE electron device letters |
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| Publication |
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2016
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| ISSN |
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0741-3106
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| Volume/pages |
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37:3(2016), p. 337-340
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| ISI |
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000372372100026
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| Full text (Publisher's DOI) |
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| Full text (open access) |
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| Full text (publisher's version - intranet only) |
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