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Uniform strain in heterostructure tunnel field-effect transistors
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| Abstract |
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| Strain can strongly impact the performance of III-V tunnel field-effect transistors (TFETs). However, previous studies on homostructure TFETs have found an increase in ON-current to be accompanied with a degradation of subthreshold swing. We perform 30-band quantum mechanical simulations of staggered heterostructure p-n-i-n TFETs submitted to uniaxial and biaxial uniform stress and find the origin of the subthreshold degradation to be a reduction of the density of states in the strained case. We apply an alternative configuration including a lowly doped pocket in the source, which allows to take full benefit of the strain-induced increase in ON-current. | |
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| Language |
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English
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| Source (journal) |
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IEEE electron device letters |
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2016
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0741-3106
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37:3(2016), p. 337-340
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000372372100026
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| Full text (open access) |
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