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Title
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Uniform strain in heterostructure tunnel field-effect transistors
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Author
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Abstract
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| Strain can strongly impact the performance of III-V tunnel field-effect transistors (TFETs). However, previous studies on homostructure TFETs have found an increase in ON-current to be accompanied with a degradation of subthreshold swing. We perform 30-band quantum mechanical simulations of staggered heterostructure p-n-i-n TFETs submitted to uniaxial and biaxial uniform stress and find the origin of the subthreshold degradation to be a reduction of the density of states in the strained case. We apply an alternative configuration including a lowly doped pocket in the source, which allows to take full benefit of the strain-induced increase in ON-current. |
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Language
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English
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Source (journal)
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IEEE electron device letters
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Publication
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2016
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ISSN
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0741-3106
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DOI
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10.1109/LED.2016.2519681
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Volume/pages
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37
:3
(2016)
, p. 337-340
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ISI
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000372372100026
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Full text (Publisher's DOI)
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Full text (open access)
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Full text (publisher's version - intranet only)
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