Publication
Title
On the manifestation of phosphorus-vacancy complexes in epitaxial Si:P films
Author
Abstract
Language
English
Source (journal)
Applied physics letters / American Institute of Physics. - New York, N.Y., 1962, currens
Publication
New York, N.Y. : American Institute of Physics, 2016
ISSN
0003-6951 [print]
1077-3118 [online]
Volume/pages
108:8(2016), 4 p.
Article Reference
082106
ISI
000373057000023
Medium
E-only publicatie
Full text (Publisher's DOI)
Full text (open access)
UAntwerpen
Faculty/Department
Research group
Publication type
Subject
Affiliation
Publications with a UAntwerp address
External links
Web of Science
Record
Identification
Creation 10.05.2016
Last edited 20.05.2018
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