Title Trapping in proton irradiated $p^{+}-n-n^{+}$ silicon sensors at fluences anticipated at the HL-LHC outer tracker Trapping in proton irradiated $p^{+}-n-n^{+}$ silicon sensors at fluences anticipated at the HL-LHC outer tracker Author Adam, W. Bergauer, T. Dragicevic, M. Alderweireldt, S. Beaumont, W. Janssen, X. Luyckx, S. Van Mechelen, P. Van Remortel, N. Van Spilbeeck, A. et al. Faculty/Department Faculty of Sciences. Physics Publication type article Publication 2016 Bristol :Institute of Physics , 2016 Subject Physics Source (journal) Journal of instrumentation. - Bristol, 2006, currens Volume/pages 11(2016) , 18 p. ISSN 1748-0221 1748-0221 Article Reference P04023 Carrier E Target language English (eng) Full text (Publishers DOI) Affiliation University of Antwerp Abstract The degradation of signal in silicon sensors is studied under conditions expected at the CERN High-Luminosity LHC. 200 mu m thick n-type silicon sensors are irradiated with protons of different energies to fluences of up to 3.10(15) neq/cm(2). Pulsed red laser light with a wavelength of 672 nm is used to generate electron-hole pairs in the sensors. The induced signals are used to determine the charge collection efficiencies separately for electrons and holes drifting through the sensor. The effective trapping rates are extracted by comparing the results to simulation. The electric field is simulated using Synopsys device simulation assuming two effective defects. The generation and drift of charge carriers are simulated in an independent simulation based on PixelAV. The effective trapping rates are determined from the measured charge collection efficiencies and the simulated and measured time-resolved current pulses are compared. The effective trapping rates determined for both electrons and holes are about 50% smaller than those obtained using standard extrapolations of studies at low fluences and suggest an improved tracker performance over initial expectations. E-info http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000375746400042&DestLinkType=RelatedRecords&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000375746400042&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=ef845e08c439e550330acc77c7d2d848 Full text (open access) https://repository.uantwerpen.be/docman/irua/fe53bb/134158.pdf Handle